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Bulletin PD-20520 rev. M 07/04
10MQ100N
SCHOTTKY RECTIFIER 2.1 Amp
IF(AV) = 2.1Amp VR = 100V
Major Ratings and Characteristics Characteristics
IF VRRM IFSM @ tp = 5 s sine VF TJ @ 1.5Apk, TJ=125C range DC
Description/ Features
The 10MQ100N surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection. Small foot print, surface mountable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability
10MQ100N Units
2.1 100 120 0.68 - 55 to 150 A V A V C
Case Styles 10MQ100N
SMA
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10MQ100N
Bulletin PD-20520 rev. M 07/04
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V)
10MQ100N
100
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current * See Fig. 4 IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 6, TJ = 25C Non-Repetitive Avalanche Energy Repetitive Avalanche Current
10MQ
1.5 120 30 1.0 0.5
Units
A
Conditions
50% duty cycle @ TL = 126 C, rectangular wave form. On PC board 9mm2 island (.013mm thick copper pad area) 5s Sine or 3s Rect. pulse 10ms Sine or 6ms Rect. pulse TJ = 25 C, IAS = 0.5A, L = 8mH Following any rated load condition and with rated VRRM applied
A mJ A
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop * See Fig. 1 (1)
10MQ
0.78 0.85 0.63 0.68
Units
V V V V mA mA V m pF nH V/s @ 1A @ 1.5A @ 1A @ 1.5A TJ = 25 C TJ = 125 C TJ = TJ max.
Conditions
TJ = 25 C TJ = 125 C VR = rated VR
IRM
Max. Reverse Leakage Current (1) * See Fig. 2
0.1 1 0.52 78.4 38 2.0 10000
VF(TO) Threshold Voltage rt CT LS Forward Slope Resistance Typical Junction Capacitance Typical Series Inductance (Rated VR)
(1) Pulse Width < 300s, Duty Cycle < 2%
VR = 10VDC, TJ = 25C, test signal = 1Mhz Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max. Storage Temperature Range
10MQ
- 55 to 150 80
Units
C C C/W DC operation
Conditions
Max. Junction Temperature Range (*) - 55 to 150
RthJA Max. Thermal Resistance Junction to Ambient wt Approximate Weight Case Style Device Marking
(*) dPtot dTj < 1 Rth( j-a)
0.07(0.002) g (oz.) SMA IR1J Similar D-64
thermal runaway condition for a diode on its own heatsink
2
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10MQ100N
Bulletin PD-20520 rev. M 07/04
1
10
TJ = 150C 125C 100C
R everse Current - I (mA)
0.1
R
0.01
75C 50C 25C
0.001
0.0001
Instantaneous F orward Current - I F (A)
0
TJ= 150C TJ= 125C 1 TJ= 25C
0
20
40
60
80
100
Reverse Voltage - V R (V)
Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage
100 Junction Capacitance - C T (pF )
TJ= 25C
10
0.1 0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage Drop - VFM (V)
1
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0
20
40
60
80
100
Reverse Voltage - V R(V)
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
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3
10MQ100N
Bulletin PD-20520 rev. M 07/04
150 Allowable Case T emperature - (C)
1.6 1.4 Average Power Loss - (Watts) 1.2 1 0.8 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 2 2.4 RMSLimit DC D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75
140 130 120 110 100 90
D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75
DC
S quare wave (D = 0.50) 80% Rated VR applied
se e note (2)
0
0.4
0.8
1.2
1.6
2
2.4
Average Forward Current - I F(AV) (A)
Average Forward Current - I F(AV) (A)
Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current
Non - Repetitive Surge Current - I FSM (A)
100
Tj = 25C
At Any Rated Load Condition And With Rated Vrrm Applied Following Surge
10 10
100
1000
10000
Square Wave Pulse Duration - t p (microsec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
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10MQ100N
Bulletin PD-20520 rev. M 07/04
Outline Table
Device Marking: IR1J
CATHODE AN OD E
1.40 (.055) 1.60 (.062)
2.50 (.098) 2.90 (.114)
1
2
4.00 (.157) 4.60 (.181) .152 (.006) .305 (.012) 2.00 (.078) 2.44 (.096) 0.76 (.030) 1.52 (.060) .103 (.004) .203 (.008) 4.80 (.188) 5.28 (.208)
1 P O LA R I TY
2 PA R T N U M B ER
1.47 MIN. (.058 MIN.)
2.10 MAX. (.085 MAX. )
1.27 MIN. (.050 MIN.)
5.53 (.218) SOLDERING PAD
Outline SMA Dimensions in millimeters and (inches) For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR1J
VOLTAGE CURRENT
IR LOGO
YYWWX
SITE ID WEEK 2nd digit of the YEAR "Y" = 1st digit of the YEAR "standard product" "P" = "Lead-Free"
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10MQ100N
Bulletin PD-20520 rev. M 07/04
Tape & Reel Information
Dimensions in millimetres and (inches)
Ordering Information Table
Device Code
10
1 1 2 3 4 5 6 7
M
2 -
Q
3
100
4
N
5
TR
6
7
Current Rating M = SMA Q = Schottky Q Series Voltage Rating (100 = 100V) N = New SMA none = Box (1000 pieces) TR = Tape & Reel (7500 pieces) none = Standard Production PbF = Lead-Free
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 07/04
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